Absolute Maximum Ratings
Drain–Source Voltage (VDS): 100 V
Gate–Source Voltage (VGS): ±20 V
Continuous Drain Current (ID @ TC = 25 °C): 9.2 A
Continuous Drain Current (ID @ TC = 100 °C): 6.5 A
Pulsed Drain Current (IDM): 37 A
Power Dissipation (PD @ TC = 25 °C): 60 W
Operating Junction Temperature: −55 °C to +175 °C
 
Key Electrical Characteristics (TJ = 25 °C, unless noted)
RDS(on): 0.27 Ω max @ VGS = 10 V, ID ≈ 5–7 A
Gate Threshold Voltage (VGS(th)): 2.0 – 4.0 V
Total Gate Charge (Qg): 16 nC (typ.)
Input Capacitance (Ciss): ~360 pF (typ.)
Forward Transconductance (gfs): ~2.7 S (typ.)
 
Switching / Dynamic
Turn‑on Delay: ~9 ns (typ.)
Rise Time: ~30 ns (typ.)
Turn‑off Delay: ~19 ns (typ.)
Fall Time: ~20 ns (typ.)
Peak Diode Recovery dv/dt: 5.5 V/ns
 
Thermal Characteristics
Junction‑to‑Case (RθJC): ≈2.5 °C/W
Junction‑to‑Ambient (RθJA): ≈62 °C/W (no heatsink)
 
Pinout (front view, leads down)
Gate
Drain (also the metal tab)
Source