Absolute Maximum Ratings

• Drain–Source Voltage (VDS): 100 V

• Gate–Source Voltage (VGS): ±20 V

• Continuous Drain Current (ID @ TC = 25 °C): 9.2 A

• Continuous Drain Current (ID @ TC = 100 °C): 6.5 A

• Pulsed Drain Current (IDM): 37 A

• Power Dissipation (PD @ TC = 25 °C): 60 W

• Operating Junction Temperature: −55 °C to +175 °C

Key Electrical Characteristics (TJ = 25 °C, unless noted)

• RDS(on): 0.27 Ω max @ VGS = 10 V, ID ≈ 5–7 A

• Gate Threshold Voltage (VGS(th)): 2.0 – 4.0 V

• Total Gate Charge (Qg): 16 nC (typ.)

• Input Capacitance (Ciss): ~360 pF (typ.)

• Forward Transconductance (gfs): ~2.7 S (typ.)

Switching / Dynamic

• Turn‑on Delay: ~9 ns (typ.)

• Rise Time: ~30 ns (typ.)

• Turn‑off Delay: ~19 ns (typ.)

• Fall Time: ~20 ns (typ.)

• Peak Diode Recovery dv/dt: 5.5 V/ns

Thermal Characteristics

• Junction‑to‑Case (RθJC): ≈2.5 °C/W

• Junction‑to‑Ambient (RθJA): ≈62 °C/W (no heatsink)

Pinout (front view, leads down)

Gate

Drain (also the metal tab)

Source