Core Specifications (Original SANYO Reference) Electrical (Ta = 25 °C unless noted)

Type: NPN BJT (epitaxial planar silicon) Collector–Base Voltage (VCBO): 80 V Collector–Emitter Voltage (VCE): 75 V Emitter–Base Voltage (VEBO): 5 V Collector Current (IC): 3 A continuous (5 A pulse) Collector Power Dissipation (PC): ~10 W DC Current Gain (hFE): 25–200 (bin‑dependent) Transition Frequency (fT): ≈100 MHz (typ.) Output Capacitance (Cob): ≈70 pF

RF Performance (Key for CB / HF)

Specified operating point: 12–13 V, 27 MHz Typical RF Output Power: ≈4 W (PEP) at 27 MHz Application focus: SSB linear & CB driver/output stages

  Package & Pinout

Package: TO‑220AB / SC‑46 Pinout (front view, leads down):

1 – Base 2 – Collector (tab) 3 – Emitter

Practical Notes (Very Important for RF Use)

• This is not a general‑purpose power transistor—it’s RF‑optimized.

• Layout, biasing, and matching are critical at 27 MHz.

• Mixing original SANYO and modern Shenzhen equivalents in push‑pull stages can lead to imbalance unless devices are matched.

• For CB radio repairs, Shenzhen versions are widely used and accepted, but quality varies by manufacturer.

Important distinction: Shenzhen versions are second‑source equivalents, not original SANYO die. RF gain, efficiency, and linearity can vary slightly between fabs, even if datasheet numbers match.