Core Specifications (Original SANYO Reference)
Electrical (Ta = 25 °C unless noted)
Type: NPN BJT (epitaxial planar silicon)
Collector–Base Voltage (VCBO): 80 V
Collector–Emitter Voltage (VCE): 75 V
Emitter–Base Voltage (VEBO): 5 V
Collector Current (IC): 3 A continuous (5 A pulse)
Collector Power Dissipation (PC): ~10 W
DC Current Gain (hFE): 25–200 (bin‑dependent)
Transition Frequency (fT): ≈100 MHz (typ.)
Output Capacitance (Cob): ≈70 pF
 
RF Performance (Key for CB / HF)
Specified operating point: 12–13 V, 27 MHz
Typical RF Output Power: ≈4 W (PEP) at 27 MHz
Application focus: SSB linear & CB driver/output stages
 
Package & Pinout
Package: TO‑220AB / SC‑46
Pinout (front view, leads down):
1 – Base
2 – Collector (tab)
3 – Emitter

 
Practical Notes (Very Important for RF Use)
This is not a general‑purpose power transistor—it’s RF‑optimized.
Layout, biasing, and matching are critical at 27 MHz.
Mixing original SANYO and modern Shenzhen equivalents in push‑pull stages can lead to imbalance unless devices are matched.
For CB radio repairs, Shenzhen versions are widely used and accepted, but quality varies by manufacturer.
 
Important distinction:
Shenzhen versions are second‑source equivalents, not original SANYO die. RF gain, efficiency, and linearity can vary slightly between fabs, even if datasheet numbers match.