General

• Device type: Bipolar Junction Transistor (BJT)

• Polarity: NPN

• Material: Silicon (Si)

• Package: TO‑220

• Typical applications: RF amplifier stages (CB / HF range), power amplification, switching

Absolute Maximum Ratings

(at TC = 25 °C, unless noted)

• Collector–Base Voltage (VCB): 80 V

• Collector–Emitter Voltage (VCE): 70 V

• Emitter–Base Voltage (VEB): 5 V

• Collector Current (IC max): 2 A

• Collector Power Dissipation (PC): 10 W

• Junction Temperature (TJ max): 150 °C

Electrical Characteristics

(Typical values)

• DC Current Gain (hFE): ≥ 100

• Transition Frequency (fT): ~75 MHz

• Collector Capacitance (Cc): ~60 pF

• Noise Figure: Not specified in most datasheets

Thermal / Mechanical

• Package: TO‑220 (MT‑25 style)

• Mounting: Through‑hole, tab connected to collector

• Operating temperature (practical): varies by manufacturer, typically up to +150 °C junction

[uxpython.com], [veswin.com]

Pinout (TO‑220, front view)

Looking at the front (marking facing you, leads downward):

1 – Base 2 – Collector (also the metal tab) 3 – Emitter

Summary Table

Notes

• The 2SC2029 is not a MOSFET—it is a bipolar RF/power transistor.

• Frequently used in CB radios and HF RF power stages, especially older designs.

• Many modern replacements exist, but RF characteristics (fT, capacitances) matter if substituting.