General
Device type: Bipolar Junction Transistor (BJT)
Polarity: NPN
Material: Silicon (Si)
Package: TO‑220
Typical applications: RF amplifier stages (CB / HF range), power amplification, switching
 
Absolute Maximum Ratings
(at TC = 25 °C, unless noted)
Collector–Base Voltage (VCB): 80 V
Collector–Emitter Voltage (VCE): 70 V
Emitter–Base Voltage (VEB): 5 V
Collector Current (IC max): 2 A
Collector Power Dissipation (PC): 10 W
Junction Temperature (TJ max): 150 °C
 
Electrical Characteristics
(Typical values)
DC Current Gain (hFE): ≥ 100
Transition Frequency (fT): ~75 MHz
Collector Capacitance (Cc): ~60 pF
Noise Figure: Not specified in most datasheets
 
Thermal / Mechanical
Package: TO‑220 (MT‑25 style)
Mounting: Through‑hole, tab connected to collector
Operating temperature (practical): varies by manufacturer, typically up to +150 °C junction
[uxpython.com], [veswin.com]
Pinout (TO‑220, front view)
Looking at the front (marking facing you, leads downward):
1 – Base 2 – Collector (also the metal tab) 3 – Emitter
 
Summary Table
Parameter
Value
Type
NPN BJT
VCE
70 V
VCB
80 V
IC max
2 A
Power Dissipation
10 W
hFE
≥ 100
fT
~75 MHz
Package
TO‑220
 
 
Notes
The 2SC2029 is not a MOSFET—it is a bipolar RF/power transistor.
Frequently used in CB radios and HF RF power stages, especially older designs.
Many modern replacements exist, but RF characteristics (fT, capacitances) matter if substituting.