Type: NPN transistor
Technology: Epitaxial planar silicon
Package: TO‑126 (3‑lead) [datasheetq.com]
Pinout (front view, flat side facing you)
1 = Emitter 2 = Collector 3 = Base
Key electrical characteristics (typical)
Collector‑Emitter Voltage (Vceo): ~45 V 
Collector Current: ~1 A (1.5 A peak) 
Power Dissipation: up to ~5 W (with proper heatsinking)
Gain (hFE): ~60–320
Transition frequency (fT): ~180–250 MHz 
RF output (27 MHz typical): about 1–1.8 watts