• Type: NPN transistor

• Technology: Epitaxial planar silicon

• Package: TO‑126 (3‑lead) [datasheetq.com]

Pinout (front view, flat side facing you)

1 = Emitter 2 = Collector 3 = Base

Key electrical characteristics (typical)

• Collector‑Emitter Voltage (Vceo): ~45 V 

• Collector Current: ~1 A (1.5 A peak) 

• Power Dissipation: up to ~5 W (with proper heatsinking)

• Gain (hFE): ~60–320

• Transition frequency (fT): ~180–250 MHz 

• RF output (27 MHz typical): about 1–1.8 watts